Atomic Layer Engineering of Aluminum-Doped Zinc Oxide Films for Efficient and Stable Perovskite Solar Cells
Data
2022-05-22Autor
Kruszyńska, Joanna
Ostapko, Jakub
Ozkaya, Veysel
Surucu, Belkis
Szawcow, Oliwia
Nikiforow, Kostiantyn
Tavakoli, Mohammad Mahdi
Yadav, Pankaj
Kot, Małgorzata
Metadane
Pokaż pełny rekordStreszczenie
Atomic layer deposition (ALD) has been considered as an efficient method
to deposit high quality and uniform thin films of various electron transport
materials for perovskite solar cells (PSCs). Here, the effect of deposition
sequence in the ALD process of aluminum-doped zinc oxide (AZO) films on
the performance and stability of PSCs is investigated. Particularly, the surface
of AZO film is terminated by diethylzinc (DEZ)/H2O (AZO-1) or trimethylaluminum
(TMA)/H2O pulse (AZO-2), and investigated with surface-sensitive
X-ray photoelectron spectroscopy technique. It is observed that AZO-2 significantly
enhances the thermal stability of the upcoming methylammonium lead
iodide (MAPbI3) layer and facilitates charge transport at the interface as evidenced
by photoluminescence spectroscopes and favorable interfacial band
alignment. Finally, planar-type PSC with AZO-2 layer exhibits a champion
power conversion efficiency of 18.09% with negligible hysteresis and retains
82% of the initial efficiency after aging for 100 h under ambient conditions
(relative humidity 40 ± 5%). These results highlight the importance of atomic
layer engineering for developing efficient and stable PSCs.