Revealing the Variation of Photodetectivity in MAPbI3 and MAPb(I0.88Br0.12)3 Single Crystal Based Photodetectors Under Electrical Poling-Induced Polarization
Data
2022-07-28Autor
Mahapatra, Apurba
Chavan, Rohit D.
Tavakoli, Mohammad Mahdi
Kumar, Pawan
Kalam, Abul
Prochowicz, Daniel
Yadav, Pankaj
Metadane
Pokaż pełny rekordStreszczenie
The use of electrical poling to induce polarization
potential has been found to increase the photocurrent (Ilight) in
hybrid perovskite-based devices; however, the origin of this process
has not been fully understood. Here, we study the effect of
electrical poling on the photodetection properties of self-powered
photodetectors (PDs) based on halide perovskites in two different
phase structures (i.e., tetragonal and cubic). Specifically, extensive
investigations are performed on the MAPbI3 (tetragonal) and
MAPb(I0.88Br0.12)3 (cubic) single crystals (SCs). Our characterization
results revealed that the Ilight has increased by 2-fold during
forward poling and decreased during reverse poling in both PDs.
The improved Ilight is caused by polarization induced ion migration,
which builds remanent potential due to ion accumulation near
metal electrodes. The effect of this polarization was found to be greater in MAPbI3 PD as compared to MAPb(I0.88Br0.12)3 PD, which
influences the interface band bending and reduces Schottky barrier height (SBH). This study highlights that the modification of
SBH, which describes the potential energy barrier for electrons formed at a metal−semiconductor junction, can tune the
photocurrent and response time of PDs.
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